| PART |
Description |
Maker |
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| BAS70-04W BAS70-05W BAS70WSERIES BAS70W BAS70-06W |
Schottky barrier double diodes
Schottky Barrier (Double) Diodes(肖特基势垒（双）二极
CSCA-A Series Hall-effect based, open-loop current sensor, Molex-type connector, 300 A rms nominal, ±900 A range
|
http://
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S B |
Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Schottky barrier diodes in small packages
|
NXP Semiconductors
|
| HSCH-9102 HSCH-9151 HSCH-9101 HSCH-9251 |
HSCH-9251 · Beamlead GaAs Schottky barrier diodes
HSCH-9101 · Beamlead GaAs Schottky barrier diodes
GaAs Beam Lead Schottky Barrier Diodes
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| MA3S781E MA3S781D |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| MA3X789 MA789 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| MA704WA MA704WK MA3X704D MA3X704E |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| CDBQR00340-HF12 CDBQR00340-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.03A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| CDBU0520-HF-12 CDBU0520-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=20V, I-O=0.5A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| SB0203EJ |
Small Signal Schottky Barrier Diodes
Schottky Barrier Diode 30V, 200mA Rectifier
|
Sanyo Semiconductor
Sanyo Semicon Device
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
